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Robert H. Dennard, in full Robert Heath Denard, (born September 5, 1932, Terrell, Texas, U.S.), American engineer credited with the invention of the one-transistor cell for dynamic random-access memory (DRAM) and with pioneering the set of consistent scaling principles that underlie the improved performance of increasingly miniaturized ...
Robert Heath Dennard (born September 5, 1932) is an American electrical engineer and inventor . Biography Dennard was born in Terrell, Texas, U.S. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively.
Robert H. Dennard. My career has been devoted to microelectronics research and development. My invention of the DRAM cell (Dynamic Random Access Memory), which forms the basis for the main memory installed in virtually every computer, cellphone, tablet and other computer devices.
THINK Blog The inspiration, as is often the case, came late one evening. Bob Dennard, then a 34-year-old IBM electrical engineer, was pondering a colleague’s research presentation he’d seen earlier that day. It was autumn 1966, and Dennard had been helping design a new form of computer memory using silicon-based transistors.
Born Sept. 5, 1932. Robert Heath Dennard invented one-transistor Dynamic Random Access Memory (DRAM), which allowed major increases in computer memory density and decreases in cost. It became the standard of the industry for RAM and enabled the microcomputer revolution. It is now commonly used in all forms of business and personal computers.
Dr. Robert H. Dennard has been an industry leader in the development of microelectronics in a career that has spanned 50 years. He is responsible for two major milestones in the progress of the industry - the invention of DRAM (Dynamic Random Access Memory) and the development of scaling principles for miniaturization of MOS (Metal Oxide ...
Born in Texas in 1932, Dennard earned a band scholarship to attend Southern Methodist University where he received his undergraduate and master's degrees in electrical engineering. He went on to get his Ph.D. from the Carnegie Institute of Technology (now Carnegie Mellon University) and signed up for a job at IBM in 1958—a job he took just to ...
Robert H. Dennard. Born 1932, Terrell, Texas; National Medal of Technology winner for IBM invention of the basic, one-transistor dynamic memory cell used in virtually all modern computers. Education: BS, electrical engineering, Southern Methodist University, 1954; MS, electrical engineering, Southern Methodist University, 1956; PhD, Carnegie ...
IBM Thomas J. Watson Research Center Yorktown Heights, NY 10598. R H Dennard. Large scale integrated circuits technology: state of the art and prospects: proceedings of the NATO Advanced Study Institute on" Large Scale Integrated Circuits Technology: State of the Art and Prospects," Erice, Italy, July 15-27, 1981, pp. 487, 1982.
Robert H. Dennard (LF’99) is an IBM Fellow Emeritus with the IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA, where he was involved in microelectronics research and development from its early days. In 1967, he invented the single-transistor dynamic memory cell (DRAM) used in most computers today.