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Dennard was born in Terrell, Texas, U.S. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively. He earned a Ph.D. from Carnegie Institute of Technology in Pittsburgh, Pennsylvania, in 1958. His professional career was spent as a researcher for International Business Machines .
Robert H. Dennard, in full Robert Heath Denard, (born September 5, 1932, Terrell, Texas, U.S.), American engineer credited with the invention of the one-transistor cell for dynamic random-access memory (DRAM) and with pioneering the set of consistent scaling principles that underlie the improved performance of increasingly miniaturized integrated circuits, two pivotal innovations that helped spur more than three decades of growth in the computer industry.
Robert Heath Dennard’s life and career illustrate the power of invention and ingenuity in transforming America from an agrarian society to today’s post-industrial information economy. Born in 1932, in Terrell, Texas, Dennard spent some of his early years on a farm without electricity and taking his lessons in a one-room schoolhouse.
Robert H. Dennard - IBM Robert H. Dennard feedback IBM Fellow Thomas J. Watson Research Center, Yorktown Heights, NY USA email@example.com +1 914 945 1371 Profile Publications Patents My career has been devoted to microelectronics research and development. I am best known for two achievements:
Robert Heath Dennard invented one-transistor Dynamic Random Access Memory (DRAM), which allowed major increases in computer memory density and decreases in cost. It became the standard of the industry for RAM and enabled the microcomputer revolution. It is now commonly used in all forms of business and personal computers. Born in Terrell, Texas, he received B.S. (1954) and M.S. (1956) degrees in Electrical Engineering from Southern Methodist University.
Dr. Robert H. Dennard has been an industry leader in the development of microelectronics in a career that has spanned 50 years. He is responsible for two major milestones in the progress of the industry - the invention of DRAM (Dynamic Random Access Memory) and the development of scaling principles for miniaturization of MOS (Metal Oxide Semiconductor) transistors and their associated integrated circuits.
Robert H. Dennard, DRAM Inventor and Scaling Pioneer, to Receive Semiconductor Industry’s Top Honor. Dennard, an IBM Fellow Emeritus, will accept 2019 Robert N. Noyce Award at SIA Award Dinner on Nov. 7. WASHINGTON—June 28, 2019—The Semiconductor Industry Association (SIA) today announced Dr. Robert H. Dennard, pioneer of transformational breakthroughs in semiconductor technology and IBM Fellow Emeritus, has been named the 2019 recipient of SIA’s highest honor, the Robert N. Noyce Award.
Dennard was born in Terrell, Texas, on 5 September 1932. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively He earned a Ph.D. from Carnegie Institute of Technology in Pittsburgh, Pennsylvania, in 1958.
Robert H. Dennard. Born 1932, Terrell, Texas; National Medal of Technology winner for IBM invention of the basic, one-transistor dynamic memory cell used in virtually all modern computers. Education: BS, electrical engineering, Southern Methodist University, 1954; MS, electrical engineering, Southern Methodist University, 1956; PhD, Carnegie Institute of Technology, 1958.
Robert H. Dennard (LF’99) is an IBM Fellow Emeritus with the IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA, where he was involved in microelectronics research and development from its early days. In 1967, he invented the single-transistor dynamic memory cell (DRAM) used in most computers today.